Tunable anomalous Hall effect in a nonferromagnetic system

被引：28

作者：

Cumings, John

Moore, L. S.

Chou, H. T.

Ku, K. C.

Xiang, G.

Crooker, S. A.

Samarth, N.

Goldhaber-Gordon, D. ^{[1
]}

机构：

[1] Stanford Univ, Dept Phys, Stanford, CA 94305 USA

[2] Univ Maryland, Dept Mat Sci & Engn, College Pk, MD 20742 USA

[3] Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA

[4] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

[5] Natl High Magnet Field Lab, Los Alamos, NM 87545 USA

来源：

PHYSICAL REVIEW LETTERS | 2006年 / 96卷 / 19期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevLett.96.196404

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We measure the low-field Hall resistivity of a magnetically doped two-dimensional electron gas as a function of temperature and electrically gated carrier density. Comparing these results with the carrier density extracted from Shubnikov-de Haas oscillations reveals an excess Hall resistivity that increases with decreasing temperature. This excess Hall resistivity qualitatively tracks the paramagnetic polarization of the sample, in analogy to the ferromagnetic anomalous Hall effect. The data are consistent with skew scattering of carriers by disorder near the crossover to localization.

引用

页数：4

共 32 条

[1] ANOMALOUS HALL-EFFECT [J].