Biaxially aligned YSZ buffer layers for YBCO tapes on technical substrates with ion-beam assisted pulsed laser deposition and in situ RHEED texture analysis

Biaxially oriented YSZ buffer layers were grown at room temperature by IBALD (Ion-Beam Assisted Laser Deposition) on polycrystalline and amorphous substrates. Dependent on deposition parameters, the films showed in-plane orientations of up to 20 degrees FWHM. Film growth at room temperature without assisting ion-beam was polycrystalline with a growth-rate dependent preferred orientation. (011)- and (001)-oriented films were obtained for growth rates of 10 and 14 Angstrom/s, respectively. The YSZ film growth with and without ion-beam bombardment was monitored in situ with a RHEED-system. The degree of in-plane orientation of the film surface with growing film thickness was observed with respect to the influence of the ion-beam on film texture. A quantitative analysis of the in-plane orientation was established.