Linear scaling electronic structure methods

被引:1118
作者
Goedecker, S [1 ]
机构
[1] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany
关键词
D O I
10.1103/RevModPhys.71.1085
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Methods exhibiting linear scaling with respect to the size of the system, the so-called O(N) methods, are an essential tool for the calculation of the electronic structure of large systems containing many atoms. They are based on algorithms that take advantage of the decay properties of the density matrix. In this article the physical decay properties of the density matrix will first be studied for both metals and insulators. Several strategies for constructing O(N) algorithms will then be presented and critically examined. Some issues that are relevant only for self-consistent O(N) methods, such as the calculation of the Hartree potential and mixing issues, will also be discussed. Finally some typical applications of O(N) methods are briefly described. [S0034-6861(99)00104-X].
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页码:1085 / 1123
页数:39
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