Magnetic tunnel sensors with Co-Cu artificial antiferromagnetic (AAF) hard subsystem

被引：21

作者：

van den Berg, HAM ^{[1
]}

Altmann, J ^{[1
]}

Bär, L ^{[1
]}

Gieres, G ^{[1
]}

Kinder, R ^{[1
]}

Rupp, R ^{[1
]}

Vieth, M ^{[1
]}

Wecker, J ^{[1
]}

机构：

[1] Siemens AG, D-91052 Erlangen, Germany

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1999年 / 35卷 / 05期

关键词：

AAF; position sensor; TMR;

D O I：

10.1109/20.801016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Micron-size magnetic tunnel junctions are studied, in which the pinning of the hard magnetic reference layer is accomplished by the so-called Artificial Antiferromagnetic Subsystem(AAF). In the AAF, two Co layers are antiferromagnetically coupled by a 1 nm thick Cu layer, thus giving rise to stability windows larger than 2 kA/m for the AAF, Al2O3-tunnel barriers of 1 and 1.5 nm Al thickness were put on top of the AAF and at its opposite surface Fe detection layers are located. The signal could be enhanced by a factor of two to 22 % by inserting a 1 nm Go-coating between the barrier and the Fe, Thus sensors were realized with signals four times higher than for the GMR counterparts.

引用

页码：2892 / 2894

页数：3

共 5 条

[1] Influence of barrier impurities on the magnetoresistance in ferromagnetic tunnel junctions [J].