Magnetoresistive field-effect transistors based on organic donor-acceptor blends

被引:14
作者
Reichert, Thomas [1 ]
Saragi, Tobat P. I.
Salbeck, Josef
机构
[1] Univ Kassel, Dept Math & Sci, Macromol Chem & Mol Mat mmCmm, D-34132 Kassel, Germany
关键词
MAGNETIC-FIELD;
D O I
10.1039/c2ra20901b
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We present magnetoresistive field-effect transistors, which are sensitive to external magnetic fields as low as 1.7 mT. The magnetosensitivity is achieved through the mixture of electron acceptor 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN) with electron donor 2,2',7,7'-tetrakis-(N,N-di-p-methylphenylamino)-9,9'-spirobifluorene (Spiro-TTB), which leads to magnetic-field-sensitive intermolecular radical pair states. These states are responsible for the magnetoresistance effect in Spiro-TTB-HAT-CN blends.
引用
收藏
页码:7388 / 7390
页数:3
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