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Multilevel Flash cells and their trade-offs
被引：50
作者：
Eitan, B
Kazerounian, R
Roy, A
Crisenza, G
Cappelletti, P
Modelli, A
机构：
来源：
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996
|
1996年
关键词：
D O I：
10.1109/IEDM.1996.553147
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
In this paper we will compare six different multilevel Flash cells, viz., Common Ground, DINOR, AND, AMG, Split Gate and NAND [1, 2, 3, 4, 5, 6, 7]. The key conclusions are that Hot Electron lends itself better than tunneling as the Multilevel programming mechanism. The Common Ground cell is the most suitable for Multilevel. The NAND architecture is the least favorable.
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页码：169 / 172
页数：4
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