Photoinduced hole injection multiplication in p-type quinacridone pigment films

被引：55

作者：

Hiramoto, M

Kawase, S

Yokoyama, M

机构：

[1] Osaka Univ, Osaka, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1996年 / 35卷 / 3A期

关键词：

quinacridone pigment; photocurrent multiplication; photoinduced hole injection; tunneling; electron trap; p-type organic semiconductor; organic/metal interface; high-sensitivity photosensor;

D O I：

10.1143/JJAP.35.L349

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A large photocurrent multiplication due to hole injection reaching 2500-fold was observed in organic p-type quinacridone pigment films. This phenomenon was revealed to be due to photoinduced excess hole injection from a positively biased metal electrode to the p-type organic film through its depletion layer under a high electric field; which is built up by the photo-accumulation of trapped electrons near the interface. This is a clear example that the reverse mechanism to the photoinduced electron injection observed for n-type organic pigment film can occur in p-type organic pigment film.

引用

页码：L349 / L351

页数：3

共 10 条

[1] DOPING EFFECT ON ORGANIC SOLAR-CELL USING QUINACRIDONE PIGMENT [J].