Negative thermal quenching of photoluminescence in ZnO

被引：54

作者：

Watanabe, M

Sakai, M ^{[1
]}

Shibata, H

Satou, C

Satou, S

Shibayama, T

Tampo, H

Yamada, A

Matsubara, K

Sakurai, K

Ishizuka, S

Niki, S

Maeda, K

Niikura, I

机构：

[1] Saitama Univ, Fac Engn, Dept Funct Mat Sci, Urawa, Saitama 3388570, Japan

[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

[3] Tokyo Denpa Co Ltd, Tokyo 1430024, Japan

来源：

PHYSICA B-CONDENSED MATTER | 2006年 / 376卷

关键词：

photoluminescence; negative thermal quenching; ZnO;

D O I：

10.1016/j.physb.2005.12.178

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have studied photoluminescence (PL) spectra of ZnO single crystals at photon energies ranging between 2.1 and 3.4eV as a function of temperature to determine thermal quenching behavior in PL emission intensity. It appears that the deep level emissions, donor-acceptor pair emissions, and the bound excitonic emissions undergo negative thermal quenching (NTQ) at intermediate temperatures above similar to 10K. By employing an NTQ formula expressed analytically as a function of temperature, we have obtained quantitative NTQ characteristics in terms of the activation energies associated with the intermediate states as well as nonradiative channels. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：711 / 714

页数：4

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