Multidimensional optimisation of process parameters by experimental design for the deposition of aluminium and silicon oxynitride films with predictable composition

被引:14
作者
Dreer, S
Krismer, R
Wilhartitz, P [1 ]
机构
[1] Plansee AG, Thin Film Technol, A-6600 Reutte, Austria
[2] Vienna Tech Univ, Inst Analyt Chem, A-1060 Vienna, Austria
[3] Plansee AG, Ctr Technol, Mat Anal, A-6600 Reutte, Austria
关键词
aluminium; optimisation; oxynitride; process parameters; silicon;
D O I
10.1016/S0257-8972(99)00017-1
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this study the deposition of aluminium and silicon oxynitride films by reactive d.c. magnetron sputtering is systematically planned by design of experiments, carried out and evaluated with the application of specialised statistics software. With these sample applications it is shown that statistical process modelling is a modern tool for process description and optimisation with the outstanding opportunity to gain fast and precise control of a technological process. The influence of the deposition parameters, such as working and reactive gas flow and sputtering power, on the concentration of oxygen, nitrogen and aluminium or silicon in the resulting films is evaluated. With the obtained data a model for the quantitative prediction of the deposition parameters necessary to obtain films with desired composition was built. This is demonstrated by a confirmatory experiment. This is also of technological importance, since the physical properties of the films depend strongly on their composition. With the help of this procedure the sample position, which was not expected to be of any relevance, could be discovered as an influential process parameter. Consequently, design of experiments can be a valuable problem solving technique. Furthermore. the flexibility of the statistical model is demonstrated by implementing the degree of process long-term repeatability into the model and, in addition, by excluding two deposition parameters with a lesser degree of significance and calculating the prediction accuracy of a process operating under this less complicated general condition. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:29 / 38
页数:10
相关论文
共 36 条
[1]  
[Anonymous], 1994, 5725 ISO
[2]   SILICON OXYNITRIDE AS A TUNABLE OPTICAL MATERIAL [J].
BAYLISS, SC ;
GURMAN, SJ .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1994, 6 (26) :4961-4970
[3]  
BHAT M, 1994, P ELECTROCHEM SOC, V94, P317
[4]   ION-BEAM-SPUTTERED ALOXNY ENCAPSULATING FILMS [J].
BIREY, H ;
PAK, SJ ;
SITES, JR ;
WAGER, JF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :2086-2089
[5]  
BOUDREAU M, 1993, MATER RES SOC SYMP P, V300, P183, DOI 10.1557/PROC-300-183
[6]   ION-ASSISTED PROCESSING OF OPTICAL COATINGS [J].
BOVARD, BG .
THIN SOLID FILMS, 1991, 206 (1-2) :224-229
[7]  
Box GEP, 1987, Empirical model-building and response surfaces
[8]  
Box GEP., 1978, Statistics for experimenters
[9]   STUDY OF PECVD SILICON OXYNITRIDE THIN-LAYERS AS ISFET SENSITIVE INSULATOR SURFACE FOR PH DETECTION [J].
CROS, Y ;
JAFFREZICRENAULT, N ;
CHOVELON, JM ;
FOMBON, JJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (02) :507-511
[10]   STRUCTURAL AND OPTICAL-PROPERTIES OF SILICON OXYNITRIDE ON SILICON PLANAR WAVE-GUIDES [J].
DELGIUDICE, M ;
BRUNO, F ;
CICINELLI, T ;
VALLI, M .
APPLIED OPTICS, 1990, 29 (24) :3489-3496