High-power erbium-doped fibre amplifier pumped by a phosphosilicate fibre Raman converter

被引：8

作者：

Kurkov, AS

Paramonov, VM

Egorova, ON

Medvedkov, OI

Dianov, EM

Yashkov, MV

Gur'yanov, AN

Zalevskii, ID

Goncharov, SE

机构：

[1] Russian Acad Sci, Inst Gen Phys, Moscow 117942, Russia

[2] Russian Acad Sci, Inst Chem High Pur Subst, Nizhnii Novgorod 603600, Russia

[3] Stelmakh Res Inst Polyus, Fed Unitary State Enterprise, Moscow 117342, Russia

[4] Millon Co, St Petersburg 194021, Russia

来源：

QUANTUM ELECTRONICS | 2001年 / 31卷 / 09期

关键词：

erbium-doped fibre amplifier; Raman converter; high-power fibre amplifier;

D O I：

10.1070/QE2001v031n09ABEH002048

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high power erbium-doped fibre amplifier pumped by single-mode radiation at 1478 nm is fabricated and tested. A Raman converter based on a fibre with a phosphosilicate core was used as the pumping source. The maximum output power achieved in spectral ranges C (1.53-1.56 mum) and L (1.56-1.60 mum) is 28 dBm.

引用

页码：801 / 803

页数：3

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