Photoluminescence of 4H-SiC:: some remarks

被引：9

作者：

Henry, A ^{[1
]}

Ivanov, IG

Ellison, A

Janzén, E

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

[2] ABB Corp Res, S-72178 Vasteras, Sweden

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 61-2卷

关键词：

4H-SiC; photoluminescence; bulk; epilayer;

D O I：

10.1016/S0921-5107(98)00509-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Low temperature photoluminescence (LTPL) measurements have been performed on bulk wafers and epilayer crystals of 4H-SiC. The understanding of a LTPL spectrum is not straightforward, especially for the characterization of films grown on substrates. Some typical examples are presented, such as LTPL spectra from n-type substrates, epilayers with various qualities, and the temperature dependence of the near band gap emission. Both the wavelength of the excitation source and the quality of the layer are shown to influence the interpretation of the LTPL data. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：234 / 238

页数：5

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