Excitonic Photoluminescence from CuGaSe2 Single Crystals and Epitaxial Layers: Temperature Dependence of the Band Gap Energy

被引：37

作者：

Bauknecht, Andreas ^{[1
]}

Siebentritt, Susanne ^{[1
]}

Albert, Juergen ^{[1
]}

Tomm, Yvonne ^{[1
]}

Lux-Steiner, Martha Christina ^{[1
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2000年 / 39卷 / 01期

关键词：

photoluminescence; excitonic emission; temperature dependence; CuGaSe2; MOVPE;

D O I：

10.7567/JJAPS.39S1.322

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Excitonic line spectra from CuGaSe2 single crystals and epitaxial layers are investigated as a function of temperature. Near band edge luminescence from free and bound excitons is observed at 10 K. The identification of both, free exciton ground and first excited state allows to determine the free exciton binding energy, which is found to be (13 +/- 2) meV. The bound exciton line is attributed to the recombination of an exciton bound to a neutral acceptor (A(0), X). The widely discussed phenomenon of an anomalous temperature dependence of the band gap energies in different chalcopyrite-type I-III-VI2 compounds is reconsidered for CuGaSe2 on the basis of temperature dependent photoluminescence studies. No anomalous behaviour of the band gap energy as a function of temperature is found in CuGaSe2.

引用

页码：322 / 325

页数：4

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