Incorporation-related structural issues for beryllium doping during growth of GaN by rf-plasma molecular-beam epitaxy

被引：20

作者：

Ptak, AJ ^{[1
]}

Wang, LJ

Giles, NC

Myers, TH

Romano, LT

Tian, C

Hockett, RA

Mitha, S

Van Lierde, P

机构：

[1] W Virginia Univ, Dept Phys, Morgantown, WV 26506 USA

[2] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA

[3] Charles Evans & Associates, Evans Analyt Grp, Sunnyvale, CA 94086 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 27期

关键词：

D O I：

10.1063/1.1429290

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Beryllium incorporation was studied for both Ga-polarity and N-polarity GaN using a series of Be step-doped epitaxial layers. Dopant concentration profiles indicated that surface polarity-related incorporation differences are not pronounced for Be. Significant surface accumulation of Be occurs during growth with surface accumulations approaching a monolayer for heavier doping levels. Transmission electron microscopy studies indicate the surface layer of Be has a significant effect on the microstructure, particularly for near monolayer coverage. (C) 2001 American Institute of Physics.

引用

页码：4524 / 4526

页数：3

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