Three-dimensional electric field probing of ferroelectrics on the nanometer scale using scanning force microscopy

被引:29
作者
Eng, LM [1 ]
Grafström, S [1 ]
Loppacher, C [1 ]
Schlaphof, F [1 ]
Trogisch, S [1 ]
Roelofs, A [1 ]
Waser, R [1 ]
机构
[1] Dresden Univ Technol, Inst Appl Photophys, D-01062 Dresden, Germany
来源
ADVANCES IN SOLID STATE PHYSICS 41 | 2001年 / 41卷
关键词
D O I
10.1007/3-540-44946-9_24
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nanoscale investigations of ferroic systems are currently of clue interest in device fabrication and analysis. We show that scanning force microscopy (SFM) is of valuable help in addressing questions of both dynamic and static stability of domains and domain walls. In this contribution polarization sensitive modes of SFM, i.e. piezoresponse force microscopy (PFM) and Kelvin force probe microscopy (KPFM) are contrasted for the internal and external electric field measurements. These techniques provide unique resolution of the sample topography including chemical heterogeneity and the domain wall width, recording of hysteresis loops on the nanometer scale, as well as the transient response when inducing ferroelectric domain switching. Emphasis is laid onto the future possibilities in measuring device limiting physical properties which are related to interface problems. Here SPM tools applied to the local inspection provide unique insight to this problematic.
引用
收藏
页码:287 / 298
页数:12
相关论文
共 27 条
[1]   Mapping the domain distribution at ferroelectric surfaces by scanning force microscopy [J].
Abplanalp, M ;
Eng, LM ;
Gunter, P .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 (Suppl 1) :S231-S234
[2]   Patterning and switching of nanosize ferroelectric memory cells [J].
Alexe, M ;
Harnagea, C ;
Hesse, D ;
Gösele, U .
APPLIED PHYSICS LETTERS, 1999, 75 (12) :1793-1795
[3]   100-nm lateral size ferroelectric memory cells fabricated by electron-beam direct writing [J].
Alexe, M ;
Harnagea, C ;
Erfurth, W ;
Hesse, D ;
Gösele, U .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2000, 70 (03) :247-251
[4]   Electrostatic force microscopy on ferroelectric crystals in inert gas atmosphere [J].
Bluhm, H ;
Wadas, A ;
Wiesendanger, R ;
Meyer, KP ;
Szczesniak, L .
PHYSICAL REVIEW B, 1997, 55 (01) :4-7
[5]   Scanning nonlinear dielectric microscopy with nanometer resolution [J].
Cho, Y ;
Kazuta, S ;
Matsuura, K .
APPLIED PHYSICS LETTERS, 1999, 75 (18) :2833-2835
[6]   MAPPING OF MOBILE CHARGES ON INSULATOR SURFACES WITH THE ELECTROSTATIC FORCE MICROSCOPE [J].
DOMANSKY, K ;
LENG, Y ;
WILLIAMS, CC ;
JANATA, J ;
PETELENZ, D .
APPLIED PHYSICS LETTERS, 1993, 63 (11) :1513-1515
[7]   Ferroelectric domain characterisation and manipulation:: a challenge for scanning probe microscopy [J].
Eng, LM ;
Bammerlin, M ;
Loppacher, C ;
Guggisberg, M ;
Bennewitz, R ;
Lüthi, R ;
Meyer, E ;
Huser, T ;
Heinzelmann, H ;
Güntherodt, HJ .
FERROELECTRICS, 1999, 222 (1-4) :153-162
[8]   Nanoscale reconstruction of surface crystallography from three-dimensional polarization distribution in ferroelectric barium-titanate ceramics [J].
Eng, LM ;
Güntherodt, HJ ;
Schneider, GA ;
Köpke, U ;
Saldaña, JM .
APPLIED PHYSICS LETTERS, 1999, 74 (02) :233-235
[9]   Surface morphology, chemical contrast, and ferroelectric domains in TGS bulk single crystals differentiated with UHV non-contact force microscopy [J].
Eng, LM ;
Bammerlin, M ;
Loppacher, C ;
Guggisberg, M ;
Bennewitz, R ;
Lüthi, R ;
Meyer, E ;
Güntherodt, HJ .
APPLIED SURFACE SCIENCE, 1999, 140 (3-4) :253-258
[10]  
Eng LM, 1999, SURF INTERFACE ANAL, V27, P422, DOI 10.1002/(SICI)1096-9918(199905/06)27:5/6<422::AID-SIA534>3.0.CO