Structures of planar defects in ZnO nanobelts and nanowires

被引:96
作者
Ding, Yong [1 ]
Wang, Zhong Lin [1 ]
机构
[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
关键词
TEM; HRTEM; ZnO; Nanobelt; Nanowire; Planar defect; Stacking fault; Twin; Inversion domain wall; SEMICONDUCTING OXIDE NANOBELTS; ZNO-IN2O3; SYSTEM; STACKING-FAULT; NANORINGS; WURTZITE; SILVER; GAN; AL;
D O I
10.1016/j.micron.2008.10.008
中图分类号
TH742 [显微镜];
学科分类号
摘要
Quasi-one-dimensional (1D) nanostructures, such as nanowires, nanobelts and nanorods, are the forefront materials for nanotechnology. To date, such nanostructures have been synthesized for a wide range of semiconductors and oxides, and they are potential building blocks for fabricating numerous nano-scale devices. 1D ZnO nanostructures, due to its unique semiconducting, piezoelectric, and bio-safe properties, have received wide attention. From Structure point of view, a common characteristic of ZnO nanostructures is that they are mostly dislocation-free. However, planar and point defects do frequently exist in such nanostructures. The objective of this paper is to present detailed electron microscopy study about the structures of planar defects, such as stacking faults, twins, inversion domain walls that existed in 1D ZnO nanostructures. These planar defects are important for understanding the growth mechanism and relevant physical and possibly chemical properties of 1D ZnO nanostructures. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码:335 / 342
页数:8
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