共 12 条
Correlation of domain processes and magnetoresistance changes as a function of field and number of bilayers in Co/Cu multilayers
被引:7
作者:

Aitchison, PR
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机构:
UNIV CAMBRIDGE,DEPT MAT SCI & MET,CAMBRIDGE CB2 3QZ,ENGLAND UNIV CAMBRIDGE,DEPT MAT SCI & MET,CAMBRIDGE CB2 3QZ,ENGLAND

Chapman, JN
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UNIV CAMBRIDGE,DEPT MAT SCI & MET,CAMBRIDGE CB2 3QZ,ENGLAND UNIV CAMBRIDGE,DEPT MAT SCI & MET,CAMBRIDGE CB2 3QZ,ENGLAND

Jardine, DB
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UNIV CAMBRIDGE,DEPT MAT SCI & MET,CAMBRIDGE CB2 3QZ,ENGLAND UNIV CAMBRIDGE,DEPT MAT SCI & MET,CAMBRIDGE CB2 3QZ,ENGLAND

Evetts, JE
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UNIV CAMBRIDGE,DEPT MAT SCI & MET,CAMBRIDGE CB2 3QZ,ENGLAND UNIV CAMBRIDGE,DEPT MAT SCI & MET,CAMBRIDGE CB2 3QZ,ENGLAND
机构:
[1] UNIV CAMBRIDGE,DEPT MAT SCI & MET,CAMBRIDGE CB2 3QZ,ENGLAND
关键词:
D O I:
10.1063/1.365505
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
The understanding of the magnetization processes in Co/Cu multilayers showing substantial giant magnetoresistance (GMR) is incomplete. To gain further insight into the coupling and resultant switching characteristics, a series of Co/Cu multilayers with 3-15 bilayers has been grown by de magnetron sputtering. Microstructural and micromagnetic studies along with MR measurements were made on the samples. Lorentz microscopy was used to directly observe the evolution of domain structures under the influence of an applied field. It appeared that dissimilar domain structures occurred in different layers. Magnetic structures were generally submicron in size although in samples with few bilayers well defined domain walls were also observed during the reversal process. Their occurrence coincided with abrupt steps in the GMR curves. (C) 1997 American Institute of Physics.
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页码:3775 / 3777
页数:3
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