Development of APSM resists for sub-200nm contact holes

被引：3

作者：

Rajaratnam, M

Reilly, M

Pai, D

Kang, D

Thackeray, J

Georger, J

Orsula, G

机构：

[1] Shipley Co., Marlboro, MA 01752

[2] Siemens Microelectronics, Inc., Hopewell Junction, NY 12533

[3] IBM Research Division, San Jose, CA 95120

来源：

MICROELECTRONIC ENGINEERING | 1999年 / 46卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(99)00100-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper focuses on using the resist contrast curve as a method for pre-screening resists for attenuated phase-shift mask contact hole applications. The importance of surface inhibition and high c-value in developing PSM C/H resists is revealed. These concepts are confirmed by lithographic evaluation. A good overall process window (without sidelobe printing) is demonstrated by such high c-value resists.

引用

页码：345 / 348

页数：4