Control of electrical conduction in DNA using oxygen hole doping

被引:81
作者
Lee, HY [1 ]
Tanaka, H
Otsuka, Y
Yoo, KH
Lee, JO
Kawai, T
机构
[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan
[2] Korea Res Inst Stand & Sci, Elect Device Lab, Taejon 305600, South Korea
关键词
D O I
10.1063/1.1456972
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using oxygen adsorption experiments on poly (dG)-poly (dC) DNA molecules, we found that their conductance can be easily controlled by several orders of magnitudes using oxygen hole doping, which is a characteristic behavior of a p-type semiconductor. It also suggests that the conductance of the DNA under doping results from charge carrier transport, not from an ionic conduction. On the other hand, we will also show that the poly (dA)-poly (dT) DNA molecules behave as an n-type semiconductor. This letter demonstrates that the concentration and the type of carriers in the DNA molecules could be controlled using proper doping methods. (C) 2002 American Institute of Physics.
引用
收藏
页码:1670 / 1672
页数:3
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