Magnetotransport properties of metallic (Ga,Mn)As films with compressive and tensile strain

被引：116

作者：

Matsukura, F

Sawicki, M

Dietl, T

Chiba, D

Ohno, H

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 21卷 / 2-4期

关键词：

ferromagnetic semiconductors; magnetoresistance; weak localization; magnetic anisotropy; (GaMn)As;

D O I：

10.1016/j.physe.2003.11.165

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Hall and sheet resistance of 200-nm thick metallic (Ga,Mn)As with compressive and tensile strain has been measured as a function of the magnetic field and temperature. The magnitude of resistance is found to depend rather strongly on relative orientations of magnetization and current and their directions in respect to crystal axes, the configuration corresponding to the highest resistance being different for compressive and tensile strain. Negative magnetoresistance, which is observed even if magnetization becomes saturated, is assigned to weak localization. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：1032 / 1036

页数：5

共 28 条

[1] Theory of magnetic anisotropy in III1-xMnxV ferromagnets -: art. no. 054418 [J].