In0.53Ga0.47As/InAs0.3P0.7 composite channel high electron mobility transistors

被引：2

作者：

Liu, D ^{[1
]}

Hudait, M ^{[1
]}

Lin, Y ^{[1
]}

Kim, H ^{[1
]}

Ringel, SA ^{[1
]}

Lu, W ^{[1
]}

机构：

[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

来源：

ELECTRONICS LETTERS | 2006年 / 42卷 / 05期

关键词：

Carrier concentration - Electron mobility - Hall effect - Indium compounds - Microwaves - Molecular beam epitaxy - Transconductance;

D O I：

10.1049/el:20063553

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An ln(0.53)Ga(0.47)A.s/lnAS(0.3)P(0.7) composite channel high electron mobility transistor (HEMT) structure was grown by molecular beam epitaxy. Room-temperature Hall measurement showed that the device wafer had an electron mobility of 7300 cm(2)/V s and a sheet electron density of 3 x 10(12) cm(-2). The fabricated HEMT devices with a gate length of 0.25 mu m exhibited excellent DC and microwave performance with a peak extrinsic transconductance of 888.3 mS/mm, a cutoff frequency (f(T)) of H 5 GHz, and a maximum frequency of oscillation of 137 GHz. This is believed to be the first report of InGaAs/InAsP composite channel HEMTs. The f(T) is the highest ever reported for any composite channel HEMTs with the same gate length.

引用

页码：307 / 309

页数：3

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