Interaction-assisted propagation of Coulomb-correlated electron-hole pairs in disordered semiconductors

被引：11

作者：

Brinkmann, D

Golub, JE

Koch, SW

Thomas, P

Maschke, K

Varga, I

机构：

[1] Univ Marburg, Fachbereich Phys & Wissensch Zentrum Mat Wissensc, D-35032 Marburg, Germany

[2] Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland

来源：

EUROPEAN PHYSICAL JOURNAL B | 1999年 / 10卷 / 01期

关键词：

D O I：

10.1007/s100510050837

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A two-band model of a disordered semiconductor is used to analyze dynamical interaction induced weakening of localization in a system that is accessible to experimental verification. The results show a dependence on the sign of the two-particle interaction and on the optical excitation energy of the Coulomb-correlated electron-hole pair.

引用

页码：145 / 148

页数：4

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