High-speed resonant-cavity-enhanced silicon photodetectors on reflecting silicon-on-insulator substrates

被引：90

作者：

Emsley, MK ^{[1
]}

Dosunmu, O ^{[1
]}

Ünlü, MS ^{[1
]}

机构：

[1] Dept Elect & Comp Engn, Boston, MA 02215 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2002年 / 14卷 / 04期

关键词：

photodetector; resonant cavity enhanced; silicon; silicon on insulator;

D O I：

10.1109/68.992597

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we report a resonant-cavity-enhanced Si photodetector fabricated on a reflecting silicon-on-insulator (SOI) substrate. The substrate incorporates a two period distributed Bragg reflector (DBR) fabricated using a commercially available double-SOI process. The buried DBR provides a 90% reflecting surface. The resonant-cavity-enhanced Si photodetectors have 40% quantum efficiency at 860 nm and response time of 29 ps. These devices are suitable for 10-Gb/s data communications.

引用

页码：519 / 521

页数：3

共 8 条

[1] High-speed polysilicon resonant-cavity photodiode with SiO2-Si Bragg reflectors [J].