High thermoelectric performance of type-III clathrate compounds of the Ba-Ge-Ga system

被引：61

作者：

Kim, Jung-Hwan ^{[1
]}

Okamoto, Norihiko L. ^{[1
]}

Kishida, Kyosuke ^{[1
]}

Tanaka, Katsushi ^{[1
]}

Inui, Haruyuki ^{[1
]}

机构：

[1] Kyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan

来源：

ACTA MATERIALIA | 2006年 / 54卷 / 08期

基金：

日本学术振兴会;

关键词：

thermoelectric; intermetallic compounds; microstructure; zintl concept;

D O I：

10.1016/j.actamat.2005.12.032

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The thermoelectric properties of type-III clathrate compounds, Ba24GaxGe100-x, have been investigated as a function of Ga content and temperature. The substitution of Ga atoms for Ge atoms leads to a decrease of carrier (electron) concentration. Electrical conduction is of n-type for all clathrate compounds investigated and the values of electrical resistivity and Seebeck coefficient increase with increasing Ga content and temperature. Both electronic and lattice thermal conductivities decrease with an increase in Ga content because of the decreased carrier concentration and the increased extent of the rattling motion of Ba atoms encapsulated in open dodecahedrons, respectively. A very high thermoelectric figure of merit (ZT) value of 1.25 is obtained at 670 degrees C when X = 15. (c) 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：2057 / 2062

页数：6

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