Frequency-temperature compensation in Ti3+ and Ti4+ doped sapphire whispering gallery mode resonators

被引：40

作者：

Hartnett, JG ^{[1
]}

Tobar, ME

Mann, AG

Ivanov, EN

Krupka, J

Geyer, R

机构：

[1] Univ Western Australia, Dept Phys, Nedlands, WA 6907, Australia

[2] Warsaw Univ Technol, Dept Elect, Inst Microelect & Optoelect, Warsaw, Poland

[3] Natl Inst Stand & Technol, Boulder, CO 80303 USA

来源：

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL | 1999年 / 46卷 / 04期

关键词：

D O I：

10.1109/58.775666

中图分类号：

O42 [声学];

学科分类号：

070206 ; 082403 ;

摘要：

A new method of compensating the frequency-temperature dependence of high-Q monolithic sapphire dielectric resonators near liquid nitrogen temperature is presented. This is achieved by doping monocrystalline sapphire with Ti3+ ions. This technique offers significant advantages over other methods.

引用

页码：993 / 1000

页数：8

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