Resist profile dependent photo-bias and in-line DICD control strategy

被引：1

作者：

Lee, CY ^{[1
]}

Teck, OT ^{[1
]}

Wen, MW ^{[1
]}

Cheng, A ^{[1
]}

Lin, YS ^{[1
]}

机构：

[1] Chartered Semicond Mfg Ltd, R&D Module Dev, Singapore 738406, Singapore

来源：

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XIII, PTS 1 AND 2 | 1999年 / 3677卷

关键词：

in-line control; DICD; lithography; metal masking;

D O I：

10.1117/12.350785

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In-line DICD control is universally used in wafer fabs to ensure on-target FICD and to monitor process fluctuation. However, how to set up an optimal DICD target sometimes becomes ambiguous as the device dimension shrinks and various photo- and etch- bias begin to emerge. In this paper, we have investigated the root cause of photo-bias and found that for i-line resist with pattern dimension smaller than 0.45 mu m, the so-called photo bias is largely caused by resist profile change. From resist cross section pictures we verify that the in-line DICD measurement usually deviates from the resist bottom CD and the deviation is resist profile dependent. Based on this understanding, we present an in-line DICD control strategy that is more efficient in terms of resist process characterization and requires no CD-SEM measurement algorithm change.

引用

页码：976 / 979

页数：4