Effect of gallium oxide dopants an electrophysical and sorption properties of zinc oxide

被引：4

作者：

Vinokurova, MV ^{[1
]}

Vinokurov, AA ^{[1
]}

Derlyukova, LE ^{[1
]}

机构：

[1] Russian Acad Sci, Inst New Chem Problems, Chernogolovka 142432, Moscow Region, Russia

来源：

RUSSIAN CHEMICAL BULLETIN | 1999年 / 48卷 / 02期

关键词：

sulfur dioxide; chemisorption; zinc oxide; conductivity; surface; gallium; dopants;

D O I：

10.1007/BF02494544

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The effect of gallium oxide dopants (0.1-0.3 at.% Ga) on the electrophysical and sorption properties of ZnO was studied in the temperature range from 19 to 350 degrees C. The introduction of the dopant increasing the conductivity of ZnO is accompanied by a change in the amounts of SO2 and Cl-2 sorbed and the reactivity of zinc oxide.

引用

页码：266 / 270

页数：5

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