Cr backslash(CoPtCr,CoPtx) layered film studies for hard bias applications

Cr\(CoPtCr,CoPt) films were deposited on oxidized Si (100) substrates via de magnetron sputtering. Process parameters, such as deposition rates, number of bilayers, and bias voltage, were varied to achieve the hard magnetic properties without thermal processing of the films. Coercivities in the range of 2000 Ok, with corresponding squareness of about 0.8-0.9, and remanent magnetization in the gange (3-3.6) memu/cm(3), were achieved by identification of the optimum conditions. (C) 1996 American Institute of Physics.