Wheatstone-Bridge readout interface for ISFET/REFET applications

被引：29

作者：

Morgenshtein, A ^{[1
]}

Sudakov-Boreysha, L

Dinnar, U

Jakobson, CG

Nemirovsky, Y

机构：

[1] Technion Israel Inst Technol, Dept Biomed Engn, IL-32000 Haifa, Israel

[2] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2004年 / 98卷 / 01期

关键词：

ISFET; readout; Wheatstone-Bridge;

D O I：

10.1016/j.snb.2003.07.017

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The paper presents a novel readout configuration for ISFET sensors based on Wheatstone-Bridge connection. This design technique allows on-chip integration, temperature compensation and measurements from ISFET/REFET pairs. The circuit is capable of operating in differential mode, and can also perform common mode and combined measurements, while improving the immunity to noise and interferences. The Wheatstone-Bridge interface benefits from enhanced operational flexibility, due to the ability of relative sensitivity control of the output signal. Direct and indirect feedback configurations are presented with operational analysis, simulations and application options. Simulation results showing 9 muV accuracy are presented. A 4 mm x 4 mm test chip in 1.6 mum CMOS technology was used for laboratory experiments using MOSFETs for emulation of ISFET/REFET sensors. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：18 / 27

页数：10

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