Thin-film poly-Si solar cells on glass substrate fabricated at low temperature

The performances of thin-film poly-Si solar cells with a thickness of less than 5 mu m on a glass substrate have been investigated. The cell of glass/back reflector/n-i-p type Si/ITO is well characterized by the structure of naturally surface texture and enhanced absorption with a back reflector (STAR), where the active i-type poly-Si layer was fabricated by plasma chemical vapor deposition (CVD) at low temperature. The cell with a thickness of 2.0 mu m demonstrated an intrinsic efficiency of 10.7% (aperture 10.1%), an open-circuit voltage of 0.539 V and a short-current density of 25.8 mA/cm(2) as independently confirmed by Japan Quality Assurance. No light-induced degradation is observed. The optical and transport properties of poly-Si cells are summarized.