High-performance GaInAs GaAs quantum-dot lasers based on a single active layer

被引：74

作者：

Schäfer, F ^{[1
]}

Reithmaier, JP ^{[1
]}

Forchel, A ^{[1
]}

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 20期

关键词：

D O I：

10.1063/1.123964

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaInAs/GaAs quantum-dot lasers were fabricated by self-organized growth in a molecular beam epitaxy system. By using a single active layer, lasers with low-threshold current densities (J(th) = 144 A/cm(2) for a 2 mm long device) and high internal quantum efficiencies (>90%) were obtained. Ground-state lasing of the quantum dots was observed up to a device temperature of 214 degrees C. (C) 1999 American Institute of Physics. [S0003-6951(99)04720-8].

引用

页码：2915 / 2917

页数：3

共 16 条

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