Pattern and feature designed growth of ZnO nanowire arrays for vertical devices

被引:112
作者
He, JH
Hsu, JH
Wang, CW
Lin, HN
Chen, LJ [1 ]
Wang, ZL
机构
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
[2] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
关键词
D O I
10.1021/jp055180j
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
An approach is demonstrated for growing aligned ZnO nanowire/nanorod arrays following a predesigned pattern and feature with controlled site, shape, distribution, and orientation. The technique relies on an integration of atomic force microscopy (AFM) nanomachining with catalytically activated vapor-liquid-solid (VLS) growth. The pattern and growth locations are defined by the catalyst distribution created by AFM, and the orientation is determined by the epitaxial growth on a single-crystal substrate. The technique opens a variety of possibilities of using nanowire arrays as sensor arrays, piezoelectric antenna arrays, nanolasers, photonic band gap crystal, biosensors, and field emitters with controlled density, location, shape, and distribution according to a designed pattern and feature.
引用
收藏
页码:50 / 53
页数:4
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