Oxide nanoparticle EUV resists: toward understanding the mechanism of positive and negative tone patterning

被引：23

作者：

Chakrabarty, Souvik ^{[1
]}

Ouyang, Christine ^{[1
]}

Krysak, Marie ^{[1
]}

Trikeriotis, Markos ^{[1
]}

Cho, Kyoungyong

Giannelis, Emmanuel P. ^{[1
]}

Ober, Christopher K. ^{[1
]}

机构：

[1] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

来源：

EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY IV | 2013年 / 8679卷

关键词：

nanoparticle photoresist; patterning mechanism; metal oxide; lithography; dual tone; EUV;

D O I：

10.1117/12.2011490

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

080906 [电磁信息功能材料与结构]; 082806 [农业信息与电气工程];

摘要：

DUV, EUV and e-beam patterning of hybrid nanoparticle photoresists have been reported previously by Ober and co-workers. The present work explores the underlying mechanism that is responsible for the dual tone patterning capability of these photoresist materials. Spectroscopic results correlated with mass loss and dissolution studies suggest a ligand exchange mechanism responsible for altering the solubility between the exposed and unexposed regions.

引用

页数：8