Synthesis and characterization of metallic TaSi2 nanowires -: art. no. 223113

被引：29

作者：

Chueh, YL

Chou, LJ ^{[1
]}

Cheng, SL

Chen, LJ

Tsai, CJ

Hsu, CM

Kung, SC

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

[2] Ind Technol Res Inst, Mat Res Labs, Hsinchu 31015, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 22期

关键词：

D O I：

10.1063/1.2132523

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

TaSi2 nanowires have been synthesized by annealing FeSi2 thin film and nanodots grown on a Si substrate in an ambient containing Ta vapor. The TaSi2 nanowires are formed in three steps; segregation of Si atoms from the FeSi2 underlayer to form Si base, growth of TaSi2 nanodots on Si base, and elongation of TaSi2 nanowire along the growth direction. Strong field-emission properties promise future electronics and optoelectronics applications. (c) 2005 American Institute of Physics.

引用

收藏

页码：1 / 3

页数：3

相关论文

共 20 条

[1] Study of surface segregation of Si on palladium silicide using Auger electron spectroscopy [J].

Abhaya, S ;

Amarendra, G ;

Gopalan, P ;

Reddy, GLN ;

Saroja, S .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2004, 37 (22) :3140-3144

[2] Field-effect transistors based on single semiconducting oxide nanobelts [J].

Arnold, MS ;

Avouris, P ;

Pan, ZW ;

Wang, ZL .

JOURNAL OF PHYSICAL CHEMISTRY B, 2003, 107 (03) :659-663

[3] Electron field emission from silicon nanowires [J].

Au, FCK ;

Wong, KW ;

Tang, YH ;

Zhang, YF ;

Bello, I ;

Lee, ST .

APPLIED PHYSICS LETTERS, 1999, 75 (12) :1700-1702

[4] Self-assembled growth of epitaxial erbium disilicide nanowires on silicon (001) [J].

Chen, Y ;

Ohlberg, DAA ;

Medeiros-Ribeiro, G ;

Chang, YA ;

Williams, RS .

APPLIED PHYSICS LETTERS, 2000, 76 (26) :4004-4006

[5] Synthesis of taperlike Si nanowires with strong field emission [J].

Chueh, YL ;

Chou, LJ ;

Cheng, SL ;

He, JH ;

Wu, WW ;

Chen, LJ .

APPLIED PHYSICS LETTERS, 2005, 86 (13) :1-3

[6] ELECTRON-ENERGY-LOSS-SPECTROSCOPY NEAR-EDGE FINE-STRUCTURES IN THE IRON-OXYGEN SYSTEM [J].

COLLIEX, C ;

MANOUBI, T ;

ORTIZ, C .

PHYSICAL REVIEW B, 1991, 44 (20) :11402-11411

[7] Stable and highly sensitive gas sensors based on semiconducting oxide nanobelts [J].

Comini, E ;

Faglia, G ;

Sberveglieri, G ;

Pan, ZW ;

Wang, ZL .

APPLIED PHYSICS LETTERS, 2002, 81 (10) :1869-1871

[8] High performance silicon nanowire field effect transistors [J].

Cui, Y ;

Zhong, ZH ;

Wang, DL ;

Wang, WU ;

Lieber, CM .

NANO LETTERS, 2003, 3 (02) :149-152

[9] THE FE/SI(100) INTERFACE [J].

GALLEGO, JM ;

MIRANDA, R .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (03) :1377-1383

[10]

GARIE LA, 1994, AM MINERAL, V79, P411