Advanced metal lift-off process using electron beam flood exposure of single layer photoresist

被引：7

作者：

Minter, J ^{[1
]}

Ross, M ^{[1
]}

Livesay, WR ^{[1
]}

Wong, S ^{[1
]}

Narcy, M ^{[1
]}

Marlowe, T ^{[1
]}

机构：

[1] Allied Signal Inc, Electron Vis Grp, San Diego, CA 92131 USA

来源：

MICROLITHOGRAPHY 1999: ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVI, PTS 1 AND 2 | 1999年 / 3678卷

关键词：

electron beam curing; lift-off; multi-layer resist;

D O I：

10.1117/12.350158

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In the manufacture of many types of integrated circuit and thin film devices, it is desirable to use a lift-off process for the metalization step to avoid manufacturing problems encountered, when creating metal interconnect structures using plasma etch. These problems include both metal adhesion and plasma etch difficulties. Key to;the success of the lift-off process is the creation of a retrograde or undercut profile in the photoresist before the metal deposition step. Until now, lift-off processing has relied on costly multi-layer photoresist schemes,image reversal, and non-repeatable photoresist processes to obtain the desired lift-off profiles in patterned photoresist. This paper presents a simple, repeatable process for creating robust, user-defined lift-off profiles in single layer photoresists using a non-thermal electron beam flood exposure. For this investigation, Lift-off profiles created using electron beam flood exposure of many popular photoresists were evaluated, Results of lift-off profiles created in positive tone AZ7209 and ip3250 are presented here.

引用

页码：1074 / 1082

页数：9