Heteroepitaxial growth dynamics of InP nanowires on silicon

被引：7

作者：

Sarkar, Ataur ^{[1
]}

Kimukin, Ibrahim ^{[1
]}

Edgar, Christopher W. ^{[1
]}

Yi, Sungsoo ^{[2
]}

Islama, M. Saif ^{[1
]}

机构：

[1] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA

[2] Agilent Technol, Mol Technol Lab, Palo Alto, CA 94304 USA

来源：

JOURNAL OF NANOPHOTONICS | 2008年 / 2卷

基金：

美国国家科学基金会;

关键词：

InP; nanowire; heterostructure; mismatch; dislocation; strain; equilibrium;

D O I：

10.1117/1.2839443

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Highly lattice-mismatched InP/Si nanowire heterostructures were synthesized using the metal-organic chemical vapor deposition (MOCVD) process at 450 C. The InP nanowire diameter as high as 500 nm is much thicker than the critical diameter (similar to 24 nm for InP/Si) predicted by a recent theoretical work on the coherent growth of nanowire heterostructures. We investigated possible factors that lead to the unusually large diameters in a highly lattice-mismatched material system. Dislocations formed at the interfacial plane of the heterostructure due to high lattice mismatch were found to contribute to the growth of nanowires with very large diameters. An extra pair of dislocation lines at the interfacial plane was found to support an increase in nanowire diameter by similar to 12 nm.

引用

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