Properties of metal-semiconductor interfaces formed on n-type GaN

被引：28

作者：

Hasegawa, H ^{[1
]}

Koyama, Y

Hashizume, T

机构：

[1] Hokkaido Univ, Res Ctr Interface Quantum Elect, Sapporo, Hokkaido 0608628, Japan

[2] Hokkaido Univ, Grad Sch Elect & Informat Engn, Sapporo, Hokkaido 0608628, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 4B期

关键词：

GaN; Schottky contacts; barrier height; in situ electrochemical process; MIGS model; DIGS model;

D O I：

10.1143/JJAP.38.2634

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Properties of metal/GaN Schottky diodes formed by the conventional vacuum deposition process and a novel in situ electrochemical process are investigated by detailed I-V, C-V and X-ray photoelectron spectroscopy (XPS) measurements with a special focus on the correlation between the contact formation process and the behavior of Schottky barrier height. Schottky diodes formed by vacuum deposition pretreated with a warm NH4OH solution showed nearly ideal thermionic emission I-V characteristics with Schottky barrier height (SBH) values weakly dependent on metal work function with the slope factor of about 0.1. On the other hand, Schottky diodes formed by the in situ electrochemical process also showed high-quality nearly ideal thermionic emission I-V characteristics, but they realized strongly metal-work-function-dependent SEW values. The slope fatter, S, was as large as 0.49. These results could not be explained by the recently proposed formula based on the metal induced gap state (MIGS) model. They are explained here from the viewpoint of the disorder induced gap state (DIGS) model.

引用

页码：2634 / 2639

页数：6

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