Growth of epitaxial CrN on MgO(001): Role of deposition angle on surface morphological evolution

被引:38
作者
Frederick, JR [1 ]
D'Arcy-Gall, J [1 ]
Gall, D [1 ]
机构
[1] Rensselaer Polytech Inst, Dept Mat Sci & Engn, Troy, NY 12180 USA
关键词
chromium nitride; glancing angle deposition (GLAD); epitaxy; surface roughening;
D O I
10.1016/j.tsf.2005.08.244
中图分类号
T [工业技术];
学科分类号
08 [工学];
摘要
CrN layers, 6 to 500 nm thick, were grown on MgO(001) at 600 degrees C by ultra-high-vacuum magnetron sputter deposition in pure N-2 discharges at 2.6 Pa. The deposition angle a with respect to the surface normal was varied from 0 degrees to 80 degrees in order to directly probe the effect of atomic shadowing on the surface morphological evolution. Layers grown with alpha = 0 degrees are single crystals which develop a regular surface mound structure. At low layer thicknesses, t less than or similar to 25 nm, the surface mounds grow primarily vertically, due to kinetic roughening, and form square-shapes with edges along low-energy (100), directions. Continued growth at t greater than or similar to 25 nm is dominated by mound-competition and coalescence which leads to a self-similar growth mode with increases in both mound height and width. Layers deposited from oblique angles alpha = 80 degrees also nucleate as single crystals with a cube-on-cube epitaxial relationship with the substrate. However, rough surfaces with cauliflower-type morphologies cause the nucleation of misoriented CrN grains that develop into cone-shaped grains that protrude out of the epitaxial matrix to form triangular faceted surface mounds. Atomic shadowing exacerbates the growth rate of these misoriented grains, causing a dramatic increase in the root-mean-square surface roughness, which is similar to 16 x higher for layers grown at alpha = 80 degrees than at alpha = 0 degrees. The roughening follows a power-law with a roughening exponent beta that increases from 0.37 +/- 0.04 to 0.57 +/- 0.15 as a is increased from 0 degrees to 80 degrees. This increase is attributed to a transition from kinetic roughening to roughening caused by atomic shadowing effects. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:330 / 335
页数:6
相关论文
共 33 条
[1]
EFFECTS OF HIGH-FLUX LOW-ENERGY (20-100 EV) ION IRRADIATION DURING DEPOSITION ON THE MICROSTRUCTURE AND PREFERRED ORIENTATION OF TI0.5AL0.5N ALLOYS GROWN BY ULTRA-HIGH-VACUUM REACTIVE MAGNETRON SPUTTERING [J].
ADIBI, F ;
PETROV, I ;
GREENE, JE ;
HULTMAN, L ;
SUNDGREN, JE .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (12) :8580-8589
[2]
Optical superlattices - A strategy for designing phase-shift masks for photolithography at 248 and 193 nm: Application to AlN/CrN [J].
Carcia, PF ;
French, RH ;
Reilly, MH ;
Lemon, MF ;
Jones, DJ .
APPLIED PHYSICS LETTERS, 1997, 70 (18) :2371-2373
[3]
Structural determination of wear debris generated from sliding wear tests on ceramic coatings using Raman microscopy [J].
Constable, CP ;
Yarwood, J ;
Hovsepian, P ;
Donohue, LA ;
Lewis, DB ;
Munz, WD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2000, 18 (04) :1681-1689
[4]
Corrosion of CrN and TiAlN coatings in chloride-containing atmospheres [J].
Cunha, L ;
Andritschky, M ;
Rebouta, L ;
Pischow, K .
SURFACE & COATINGS TECHNOLOGY, 1999, 116 :1152-1160
[5]
ATOMIC EVENTS AT LATTICE STEPS AND CLUSTERS - A DIRECT VIEW OF CRYSTAL-GROWTH PROCESSES [J].
EHRLICH, G .
SURFACE SCIENCE, 1995, 331 :865-877
[6]
DEPOSITION OF CONTINUOUS AND WELL ADHERING DIAMOND FILMS ON STEEL [J].
FAYER, A ;
GLOZMAN, O ;
HOFFMAN, A .
APPLIED PHYSICS LETTERS, 1995, 67 (16) :2299-2301
[7]
Nanostaircases: An atomic shadowing instability during epitaxial CrN(001) layer growth [J].
Frederick, JR ;
Gall, D .
APPLIED PHYSICS LETTERS, 2005, 87 (05)
[8]
Surface morphological evolution of epitaxial CrN(001) layers [J].
Frederick, JR ;
Gall, D .
JOURNAL OF APPLIED PHYSICS, 2005, 98 (05)
[9]
Growth of poly- and single-crystal ScN on MgO (001):: Role of low-energy N+2 irradiation in determining texture, microstructure evolution, and mechanical properties [J].
Gall, D ;
Petrov, I ;
Hellgren, N ;
Hultman, L ;
Sundgren, JE ;
Greene, JE .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (11) :6034-6041
[10]
Pathways of atomistic processes on TiN(001) and (111) surfaces during film growth:: an ab initio study [J].
Gall, D ;
Kodambaka, S ;
Wall, MA ;
Petrov, I ;
Greene, JE .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (11) :9086-9094