Sixfold ring clustering in sp2-dominated carbon and carbon nitride thin films:: A Raman spectroscopy study

被引:70
作者
Abrasonis, G
Gago, R
Vinnichenko, M
Kreissig, U
Kolitsch, A
Möller, W
机构
[1] Forschungszentrum Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany
[2] Univ Autonoma Madrid, Ctr Micro Anal Mat, E-28049 Madrid, Spain
[3] Univ Autonoma Madrid, Dept Fis Aplicada, E-28049 Madrid, Spain
来源
PHYSICAL REVIEW B | 2006年 / 73卷 / 12期
关键词
D O I
10.1103/PhysRevB.73.125427
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The atomic arrangement in sp(2)-dominated carbon (C) and carbon nitride (CNx) thin films has been studied by Raman spectroscopy as a function of substrate temperature and, in the case of CNx, different N incorporation routes (growth methods). In this way, materials composing graphitelike, fullerenelike (FL), and paracyanogenlike structures have been compared. The results show that each type of arrangement results in a characteristic set of the Raman spectra parameters, which describe the degree of aromatic clustering, bond length, and angle distortion and order in sixfold structures. In the case of C films, the atomic structure evolves with substrate temperature from a disordered network to nanocrystalline planar graphitic configurations, with a progressive promotion in size and ordering of sixfold ring clusters. Nitrogen incorporation favors the promotion of sixfold rings in highly disordered networks produced at low temperatures, but precludes the formation of extended graphiticlike clusters at elevated substrate temperatures (>700 K). In the latter case, N introduces a high degree of disorder in sixfold ring clusters and enhances the formation of a FL microstructure. The formation and growth of aromatic clusters are discussed in terms of substrate temperature, N incorporation, growth rate, film-forming sources, and concurrent bombardment by hyperthermal particles during growth.
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页数:13
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共 73 条
[1]   Nitrogen incorporation in carbon nitride films produced by direct and dual ion-beam sputtering -: art. no. 074907 [J].
Abrasonis, G ;
Gago, R ;
Jimenez, I ;
Kreissig, U ;
Kolitsch, A ;
Möller, W .
JOURNAL OF APPLIED PHYSICS, 2005, 98 (07)
[2]  
ABRASONIS G, UNPUB
[3]   Electrical and optical properties of CNx(0≤x≤0.25) films deposited by reactive magnetron sputtering [J].
Broitman, E ;
Hellgren, N ;
Järrendahl, K ;
Johansson, MP ;
Olafsson, S ;
Radnóczi, G ;
Sundgren, JE ;
Hultman, L .
JOURNAL OF APPLIED PHYSICS, 2001, 89 (02) :1184-1190
[4]   EFFECTS OF SUBSTRATE-TEMPERATURE ON CHEMICAL-STRUCTURE OF AMORPHOUS-CARBON FILMS [J].
CHO, NH ;
VEIRS, DK ;
AGER, JW ;
RUBIN, MD ;
HOPPER, CB ;
BOGY, DB .
JOURNAL OF APPLIED PHYSICS, 1992, 71 (05) :2243-2248
[5]   SPUTTER DEPOSITION OF DENSE DIAMOND-LIKE CARBON-FILMS AT LOW-TEMPERATURE [J].
CUOMO, JJ ;
DOYLE, JP ;
BRULEY, J ;
LIU, JC .
APPLIED PHYSICS LETTERS, 1991, 58 (05) :466-468
[6]   Spectroscopic studies of nitrogenated amorphous carbon films prepared by ion beam sputtering [J].
Das, D ;
Chen, KH ;
Chattopadhyay, S ;
Chen, LC .
JOURNAL OF APPLIED PHYSICS, 2002, 91 (08) :4944-4955
[7]   USE OF RAMAN-SCATTERING TO INVESTIGATE DISORDER AND CRYSTALLITE FORMATION IN AS-DEPOSITED AND ANNEALED CARBON-FILMS [J].
DILLON, RO ;
WOOLLAM, JA ;
KATKANANT, V .
PHYSICAL REVIEW B, 1984, 29 (06) :3482-3489
[8]   Nitrogen substitution of carbon in graphite: Structure evolution toward molecular forms [J].
dos Santos, MC ;
Alvarez, F .
PHYSICAL REVIEW B, 1998, 58 (20) :13918-13924
[9]   STRUCTURAL CHARACTERIZATION OF ION-IMPLANTED GRAPHITE [J].
ELMAN, BS ;
SHAYEGAN, M ;
DRESSELHAUS, MS ;
MAZUREK, H ;
DRESSELHAUS, G .
PHYSICAL REVIEW B, 1982, 25 (06) :4142-4156
[10]   Relationship between composition and position of Raman and IR peaks in amorphous carbon alloys [J].
Fanchini, G ;
Messina, G ;
Paoletti, A ;
Ray, SC ;
Santangelo, S ;
Tagliaferro, A ;
Tucciarone, A .
SURFACE & COATINGS TECHNOLOGY, 2002, 151 :257-262