Polymer design for 157 nm chemically amplified resists

被引：74

作者：

Ito, H ^{[1
]}

Wallraff, GM ^{[1
]}

Brock, P ^{[1
]}

Fender, N ^{[1
]}

Truong, H ^{[1
]}

Breyta, G ^{[1
]}

Miller, DC ^{[1
]}

Sherwood, MH ^{[1
]}

Allen, RD ^{[1
]}

机构：

[1] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVIII, PTS 1 AND 2 | 2001年 / 4345卷

关键词：

157 nm resists; fluoropolymers; hexafluoroisopropanol; alpha-trifluoromethylacrylates; copolymerization kinetics; chemical amplification;

D O I：

10.1117/12.436857

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Based on UV measurements at 157 nm of in-house fluoropolymers we have selected alpha-trifluoromethylacrylate and norbornene bearing a pendant hexafluoroisopropanol group as our building blocks for 157 nm resist polymers. Polymers consisting of these repeat units have an optical density/mum of 3 or below at 157 nm. We have found that the alpha-trifluoromethylacrylate derivatives conveniently undergo radical copolymerization with norbornenes, which has provided a breakthrough in preparation of our 157 rim resist polymers. This approach offers flexibility and versatility because an acidic moiety or acid-labile group can be placed in either acrylate or norbornene repeat unit. Other platforms of interest include all-acrylic, all-norbornene, and acrylic-styrenic polymers.

引用

页码：273 / 284

页数：12

共 27 条

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[Anonymous], RECENT ADV ANIONIC P

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