H2 dilution effect in the Cat-CVD processes of the SiH4/NH3 system

被引:19
作者
Ansari, SG
Umemoto, H [1 ]
Morimoto, T
Yoneyama, K
Izumi, A
Masuda, A
Matsumura, H
机构
[1] Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan
[2] Kyushu Inst Technol, Dept Elect Elect & Comp Engn, Kitakyushu, Fukuoka 8048550, Japan
关键词
chemical vapor deposition; silicon nitride; ammonia; silane;
D O I
10.1016/j.tsf.2005.07.098
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Gas-phase diagnostics in the catalytic chemical vapor deposition processes of the SiH4/NH3/H-2 system were carried out to examine the effect of H-2 dilution. The decomposition efficiency of NH3 showed a sharp decrease with the introduction of a small amount of SiH4, but this decrease was recovered by the addition of H-2. When the NH3 pressure was low. On the other hand, at higher NH3 pressures, the decomposition efficiency showed a minor dependence on the H-2 partial pressure. The addition of SiH4 to the NH3 system decreases the H-atom density by one order of magnitude, but this decrease is also recovered by H-2 addition. H atoms produced from H-2 must re-activate the catalyzer surfaces poisoned by SiH4 when the NH3 pressure is low. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:31 / 34
页数:4
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