共 16 条
H2 dilution effect in the Cat-CVD processes of the SiH4/NH3 system
被引:19
作者:

Ansari, SG
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机构: Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan

Umemoto, H
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h-index: 0
机构:
Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan

Morimoto, T
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机构: Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan

Yoneyama, K
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机构: Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan

Izumi, A
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h-index: 0
机构: Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan

Masuda, A
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机构: Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan

Matsumura, H
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机构: Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan
机构:
[1] Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan
[2] Kyushu Inst Technol, Dept Elect Elect & Comp Engn, Kitakyushu, Fukuoka 8048550, Japan
关键词:
chemical vapor deposition;
silicon nitride;
ammonia;
silane;
D O I:
10.1016/j.tsf.2005.07.098
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Gas-phase diagnostics in the catalytic chemical vapor deposition processes of the SiH4/NH3/H-2 system were carried out to examine the effect of H-2 dilution. The decomposition efficiency of NH3 showed a sharp decrease with the introduction of a small amount of SiH4, but this decrease was recovered by the addition of H-2. When the NH3 pressure was low. On the other hand, at higher NH3 pressures, the decomposition efficiency showed a minor dependence on the H-2 partial pressure. The addition of SiH4 to the NH3 system decreases the H-atom density by one order of magnitude, but this decrease is also recovered by H-2 addition. H atoms produced from H-2 must re-activate the catalyzer surfaces poisoned by SiH4 when the NH3 pressure is low. (c) 2005 Elsevier B.V. All rights reserved.
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页码:31 / 34
页数:4
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