J-aggregation in α-sexithiophene submonolayer films on silicon dioxide

被引:86
作者
Da Como, E [1 ]
Loi, MA [1 ]
Murgia, M [1 ]
Zamboni, R [1 ]
Muccini, M [1 ]
机构
[1] CNR, Ist Studio Mat Nanostrutturati, I-40129 Bologna, Italy
关键词
D O I
10.1021/ja056060s
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report on the observation of J-aggregates in submonolayer films of alpha-sexithiophene grown on silicon dioxide. Photoluminescence spectroscopy reveals that submonolayers are formed by molecules lying flat on the substrate with a head to tail configuration. Excitation energy dependence of photoluminescence shows a red-shifted absorption with respect to isolated molecules and a negligible Stokes shift between absorption and emission. The pronounced structural order of J-aggregates is reflected in the fwhm of the emission bands. From time-resolved and low-temperature photoluminescence experiments, we infer a quantum yield of the J-aggregate between 0.6 and 1. The demonstration of spontaneous formation of J-aggregates of pi-conjugated systems on amorphous silicon-based substrates can be relevant for the development of organic-inorganic hybrid photonic devices.
引用
收藏
页码:4277 / 4281
页数:5
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