Precise line-and-space monitoring results by ellipsometry

I have demonstrated rapid and nondestructive line-and-space monitoring by ellipsometry. With this method, subquartermicron line-and-space chloromethylated poly-alpha-methylstyrene (CMS) negative electron beam resist patterns with linewidths varying in 10 nm increments are clearly distinguishable with good repeatability. I also showed that ellipsometry is an effective tool for monitoring polysilicon line-and-space patterns and their cross-sectional Line shape variation. These capabilities are essential for future in-line monitoring of relative linewidth fluctuations.