Effect of surface treatment and back contact material on field emission from tetrahedral amorphous carbon

被引：18

作者：

Hart, A ^{[1
]}

Satyanarayana, BS ^{[1
]}

Milne, WI ^{[1
]}

Robertson, J ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

来源：

关键词：

diamond-like carbon; field emission; Ta-C;

D O I：

10.1016/S0925-9635(98)00305-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The location of the barrier for electron field emission from diamond-like carbon is identified by subjecting tetrahedral amorphous carbon (ta-C) films to H-2, O-2 and Ar plasma treatments to change their chemical termination and etch off any surface layers, and to deposit ta-C on substrates of different work function. Emission thresholds and current densities for undoped ta-C are found to be greatly increased by the plasma etching, due to an increase in emission site density, whereas little dependence was found on the work function of the back contact. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：809 / 813

页数：5

共 23 条

[1]

Amaratunga GAJ, 1996, APPL PHYS LETT, V68, P2529, DOI 10.1063/1.116173

[2] Electronic and topographic structure of ta-C, ta-C:N and ta-C:B investigated by scanning tunnelling microscopy [J].