Nonequilibrium model for semiconductor laser modulation response

被引：39

作者：

Chow, WW

Schneider, HC

Koch, SW

Chang, CH

Chrostowski, L

Chang-Hasnain, CJ

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

[2] Univ Marburg, Dept Phys, D-35032 Marburg, Germany

[3] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany

[4] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2002年 / 38卷 / 04期

关键词：

nonequilibrium laser dynamics; optical hole burning; quantum-well lasers; semiconductor lasers; surface-emitting lasers;

D O I：

10.1109/3.992554

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a laser model for describing the effects of nonequilibrium carrier distributions. The approach is based on the coupled Maxwell-semiconductor-Bloch equations, with carrier-carrier and carrier-phonon collisions treated in the relaxation rate approximation. Using examples involving relaxation oscillation, current modulation, and optical injection, we demonstrate how the model can be used to study the influences of spectral hole burning, dynamic carrier population bottleneck, and plasma heating on semiconductor laser modulation response.

引用

页码：402 / 409

页数：8

共 15 条

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