SiC nanorods prepared from SiO and activated carbon

被引：99

作者：

Gao, YH

Bando, Y

Kurashima, K

Sato, T

机构：

[1] NIMS, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan

[2] NIMS, Nanomat Lab, Tsukuba, Ibaraki 3050044, Japan

来源：

JOURNAL OF MATERIALS SCIENCE | 2002年 / 37卷 / 10期

关键词：

D O I：

10.1023/A:1015207416903

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SiC nanorods with 20-100 nm diameter and 10-100 mum length were synthesized by reaction between SiO and amorphous activated carbon (AAC) at 1380degreesC. Microstructural characterization of the SiC nanorods was carried out by high resolution transmission electron microscopy (HRTEM) and energy dispersive spectroscopy (EDS). The SiC nanorods grow on either a chain or from facets of SiC nanoparticles. They are usually straight and preferentially orientated along the [111] direction. Branching phenomenon exists for these nanorods. Typical SiC nanorod tip was analyzed by HRTEM image and EDS analysis. Based on an experimental analysis, a formation mechanism is proposed to explain the microstructural characterization of the SiC nanorods. (C) 2002 Kluwer Academic Publishers.

引用

页码：2023 / 2029

页数：7

共 9 条

[1]

Chase M. W., 1985, JANAF THERMOCHEMICAL

[2] SYNTHESIS AND CHARACTERIZATION OF CARBIDE NANORODS [J].