Electrical nanoscale training of piezoelectric response leading to theoretically predicted ferroelastic domain contributions in PZT thin films

被引:9
作者
Buehlmann, Simon [1 ]
Muralt, Paul [1 ]
机构
[1] Swiss Fed Inst Technol, SMX, Ceram Lab, CH-1015 Lausanne, Switzerland
关键词
D O I
10.1002/adma.200701311
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Piezoelectric contributions from mobile 90 degrees domains are locally activated by electrical training of a PZT thin film. The high response state of 160 pin V-1 corresponds well with theoretical predictions. This state relaxed at modest trainings within minutes but was stabilized after extensive training. Our findings indicate that dramatic domain reconfigurations must take place.
引用
收藏
页码:3090 / 3095
页数:6
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