Self-consistent rate theory of submonolayer homoepitaxy with attachment/detachment kinetics

被引:97
作者
Bales, GS [1 ]
Zangwill, A [1 ]
机构
[1] GEORGIA INST TECHNOL, SCH PHYS, ATLANTA, GA 30332 USA
关键词
D O I
10.1103/PhysRevB.55.R1973
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The reversible nucleation and growth of two-dimensional islands during the submonolayer stage of epitaxial growth is studied with self-consistent rate equations and kinetic Monte Carlo simulations. In contrast to most previous work, we take account of the effects of both a finite energy barrier to the detachment of atoms from islands and a finite barrier to the incorporation of adatoms into islands. A correct boundary condition for the diffusion field at island edges is derived that takes account of these processes. For small detachment rates, quantitative agreement is obtained between the solutions to the rate theory and the simulations for the average monomer and island densities as a function of coverage.
引用
收藏
页码:R1973 / R1976
页数:4
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