Patterning of highly oriented pyrolytic graphite by oxygen plasma etching

被引：137

作者：

Lu, XK ^{[1
]}

Huang, H ^{[1
]}

Nemchuk, N ^{[1
]}

Ruoff, RS ^{[1
]}

机构：

[1] Washington Univ, Dept Phys, St Louis, MO 63130 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 02期

关键词：

D O I：

10.1063/1.124316

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Patterning of highly oriented pyrolytic graphite (HOPG) was demonstrated by oxygen plasma etching of lithographically patterned substrates. Periodic arrays of islands, or holes of several microns on an edge, were obtained on freshly cleaved HOPG surfaces which had been prepared with SiO2 mask stops and then oxygen plasma etched. The etching process is described, including a study of etch rate as a function of rf power, and morphology was characterized with scanning electron microscopy. (C) 1999 American Institute of Physics. [S0003-6951(99)03628-1].

引用

页码：193 / 195

页数：3

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