Plasma assisted dry etching of cobalt silicide for microelectronics applications

被引：7

作者：

Fracassi, F ^{[1
]}

dAgostino, R ^{[1
]}

Lamendola, R ^{[1
]}

Filippo, A ^{[1
]}

Rapisarda, C ^{[1
]}

Vasquez, P ^{[1
]}

机构：

[1] CORIMME,I-95121 CATANIA,ITALY

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1996年 / 143卷 / 02期

关键词：

D O I：

10.1149/1.1836504

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The dry etching of cobalt silicide has been investigated to evaluate the most important process variables. It has been demonstrated that among the commonly used etchants, only chlorine atoms are suitable to react appreciably with CoSi2. Strong ion bombardments and high temperatures are necessary to obtain good etch rates and to initiate the process (a resistant surface contaminant layer must be removed). A detailed XPS investigation of CoSi2 before and during the etching process is also reported.

引用

页码：701 / 707

页数：7

共 18 条

[1]

CHOW TP, 1984, DRY ETCHING MICROELE, P40

[2]

d'Agostino R., 1990, PLASMA DEPOSITION TR, P95

[3] PLASMA-ETCHING OF TI IN FLUORINE-CONTAINING FEEDS [J].