Passivation of Si(111)-7x7 by a C-60 monolayer

被引：21

作者：

Dunn, AW

Moriarty, P

Upward, MD

Beton, PH

机构：

[1] Department of Physics, University of Nottingham

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 04期

关键词：

D O I：

10.1063/1.117768

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

C-60 monolayers are formed on a Si(111)-7X7 surface under ultrahigh vacuum (UHV) conditions. The effects of exposure to atmosphere (for 30 min) and water (for 30 s) are assessed by comparing images of the surface acquired using an UHV scanning tunneling microscope. Following exposure and/or immersion we are able to resolve the C-60 molecules exhibiting hexagonal order in an arrangement which is essentially identical to that formed prior to withdrawal from the UHV system. Our results clearly show that deposition of one monolayer of C-60 on a Si surface can inhibit chemical attack by water and atmospheric oxygen. (C) 1996 American Institute of Physics.

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页码：506 / 508

页数：3

相关论文

共 19 条

[1] ATOMIC SCALE CONVERSION OF CLEAN SI(111)-H-1X1 TO SI(111)-2X1 BY ELECTRON-STIMULATED DESORPTION [J].

BECKER, RS ;

HIGASHI, GS ;

CHABAL, YJ ;

BECKER, AJ .

PHYSICAL REVIEW LETTERS, 1990, 65 (15) :1917-1920

[2] MANIPULATION OF C-60 MOLECULES ON A SI SURFACE [J].

BETON, PH ;

DUNN, AW ;

MORIARTY, P .

APPLIED PHYSICS LETTERS, 1995, 67 (08) :1075-1077

[3] SINGLE-MONOLAYER ORDERED PHASES OF C-60 MOLECULES ON SI(111)-(7X7) SURFACES [J].

CHEN, D ;

CHEN, J ;

SARID, D .

PHYSICAL REVIEW B, 1994, 50 (15) :10905-10909

[4] TEMPERATURE EFFECTS OF ADSORPTION OF C(60) MOLECULES ON SI(111)-(7X7) SURFACES [J].

CHEN, D ;

SARID, D .

PHYSICAL REVIEW B, 1994, 49 (11) :7612-7620

[5] REACTION AND PASSIVATION OF ALUMINUM WITH C-60 [J].

HAMZA, AV ;

YKES, J ;

MOSLEY, WD ;

DINH, L ;

BALOOCH, M .

SURFACE SCIENCE, 1994, 318 (03) :368-378

[6]

Hang Xu, 1993, Physical Review Letters, V70, P1850, DOI 10.1103/PhysRevLett.70.1850

[7] COMPARISON OF SI(111) SURFACES PREPARED USING AQUEOUS-SOLUTIONS OF NH4F VERSUS HF [J].

HIGASHI, GS ;

BECKER, RS ;

CHABAL, YJ ;

BECKER, AJ .

APPLIED PHYSICS LETTERS, 1991, 58 (15) :1656-1658

[8] C-60 ENCAPSULATION OF THE SI(111)-(7X7) SURFACE [J].

HONG, HW ;

MCMAHON, WE ;

ZSCHACK, P ;

LIN, DS ;

ABURANO, RD ;

CHEN, H ;

CHIANG, TC .

APPLIED PHYSICS LETTERS, 1992, 61 (26) :3127-3129

[9] ADSORPTION OF INDIVIDUAL C-60 MOLECULES ON SI(111) [J].

LI, YZ ;

CHANDER, M ;

PATRIN, JC ;

WEAVER, JH ;

CHIBANTE, LPF ;

SMALLEY, RE .

PHYSICAL REVIEW B, 1992, 45 (23) :13837-13840

[10] NANOSCALE PATTERNING AND OXIDATION OF H-PASSIVATED SI(100)-2X1 SURFACES WITH AN ULTRAHIGH-VACUUM SCANNING TUNNELING MICROSCOPE [J].

LYDING, JW ;

SHEN, TC ;

HUBACEK, JS ;

TUCKER, JR ;

ABELN, GC .

APPLIED PHYSICS LETTERS, 1994, 64 (15) :2010-2012